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DMN3023L N-Channel MOSFET

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Description

ADVANCED INNEFWORPRMOATDIUOCNT Product Summary V(BR)DSS 30V RDS(ON) 25mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID TA = +25°C 6.2A 5.8A .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance,.

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Datasheet Specifications

Part number
DMN3023L
Manufacturer
DIODES ↗
File Size
522.26 KB
Datasheet
DMN3023L-Diodes.pdf
Description
N-Channel MOSFET

Features

* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualifie

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* Load Switch
* DC-DC Converters
* Power Management Functions DMN3023L N-CHANNEL ENHAN

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