DMN3020UTS N-CHANNEL MOSFET

DIODES

Description

DMN3020UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 20mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V ID max TC = +25°C 15A 14A .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea.

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Datasheet Specifications

Part number: DMN3020UTS
Manufacturer: DIODES ↗
File Size: 306.23 KB
Datasheet: DMN3020UTS-DIODES.pdf
Description: N-CHANNEL MOSFET

Features

* Low Gate Threshold Voltage
* Low On-Resistance
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
* Case: TSSOP-8

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Battery Management Application
* Power Management Functions

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DMN3020UTS N-CHANNEL MOSFET DIODES

DIODES DMN3020UTS-like datasheet