* Low RDS(ON)
* Ensures On-State Losses are Minimized
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
* Totally Lead-Free & Fully RoHS Complia
DMN3009LFVQ Datasheet (499.08 KB)
DMN3009LFVQ
499.08 KB
30v n-channel mosfet.
DMN3009LFVQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX)
Product Summary
BVDSS 30V
RDS(ON) max 5.5mΩ @ VGS = 10V 9.0mΩ @ VGS = 4.5.
📁 Related Datasheet
DMN3009LFV - 30V N-CHANNEL MOSFET
(DIODES)
DMN3009LFV
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX)
Product Summary
BVDSS 30V
RDS(ON) max 5.5mΩ @ VGS = 10V 9.0mΩ @ VGS = 4.5V.
DMN3009LFVW - 30V N-CHANNEL MOSFET
(DIODES)
DMN3009LFVW
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX)
Product Summary
BVDSS 30V
RDS(ON) max 5.0m @ VGS = 10V 7.4m @ VGS.
DMN3009LFVWQ - 30V N-CHANNEL MOSFET
(DIODES)
DMN3009LFVWQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 30V
RDS(ON) Max 5.0m @ VGS = 10V 7.4m @ VGS = 4.5V
ID Max.
DMN3009SFG - N-CHANNEL MOSFET
(Diodes)
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Product Summary
BVDSS 30V
RDS(ON) Max
5.5mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V
ID Max TC = +25°C
45A 30A
Descrip.
DMN3009SFGQ - N-CHANNEL MOSFET
(DIODES)
DMN3009SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 30V
RDS(on) Max
5.5mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V
ID Max TC.
DMN3009SK3 - 30V N-CHANNEL MOSFET
(Diodes)
ADVANCED INFORMATION
Product Summary
BVDSS 30V
RDS(ON) max
5.5mΩ @ VGS = 10V 9.0mΩ @ VGS = 4.5V
ID max TC = +25°C
80A
60A
DMN3009SK3
Green
30V N-.
DMN3009SK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance
:.
DMN3009SSS - 30V N-CHANNEL MOSFET
(DIODES)
DMN3009SSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) max 5.5mΩ @ VGS = 10V 7.5mΩ @ VGS = 4.5V
ID max TA = +25°C
15A
.
