DMN3009SSS 30V N-CHANNEL MOSFET

DIODES

Description

DMN3009SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 5.5mΩ @ VGS = 10V 7.5mΩ @ VGS = 4.5V ID max TA = +25°C 15A .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMN3009SSS
Manufacturer: DIODES ↗
File Size: 473.95 KB
Datasheet: DMN3009SSS-DIODES.pdf
Description: 30V N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* Motor Control
* Backlighting
* Power Management Functions

DMN3009SSS Distributors

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DMN3009SSS 30V N-CHANNEL MOSFET DIODES

DIODES DMN3009SSS-like datasheet