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DMN3009SFG N-CHANNEL MOSFET

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Description

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary BVDSS 30V RDS(ON) Max 5.5mΩ @ VGS = 10V 9mΩ @ VGS = 4.5V ID Max TC = +25°C 45A 30A Descrip.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Features

* Low On-Resistance
* Low Input Capacitance
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Power Management Functions
* DC-DC Converters
* Battery DMN3009SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFE

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