* Low RDS(ON)
* Ensures On-State Losses are Minimized
* Small, Form Factor Thermally Efficient Package Enables Higher Density End Products
* Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products
* 100% Unclamped Inductive Switch (UIS) Test in Prod
DMN3008SFG Datasheet (495.83 KB)
DMN3008SFG
495.83 KB
N-channel mosfet.
ADVANCE INFORMATION
DMN3008SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 30V
RDS(ON) Max
4.4mΩ @ VGS = 10V 5.5mΩ @.
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