Datasheet Details
- Part number
- DMN3009LFVWQ
- Manufacturer
- DIODES ↗
- File Size
- 559.94 KB
- Datasheet
- DMN3009LFVWQ-DIODES.pdf
- Description
- 30V N-CHANNEL MOSFET
DMN3009LFVWQ Description
DMN3009LFVWQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 5.0m @ VGS = 10V 7.4m @ VGS = 4.5V ID Max.
and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications.
DMN3009LFVWQ Features
* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher
density end products
* Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
* 100% Unclamped Inductive Switching (UIS) Test in Pro
DMN3009LFVWQ Applications
* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Backlighting
* Power Management Functions
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