DMN3730UFB4 30V N-Channel MOSFET

Diodes

Description

DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A Fe.
and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making i.

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Datasheet Specifications

Part number: DMN3730UFB4
Manufacturer: DIODES ↗
File Size: 163.36 KB
Datasheet: DMN3730UFB4_Diodes.pdf
Description: 30V N-Channel MOSFET

Applications

* This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Load switch Portable applications Power Management Functions Mechanical Data

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DMN3730UFB4 30V N-Channel MOSFET Diodes

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