Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Motor Control
Power Management Functions
SOT363
G1
Features
- Dual N-Channel MOSFET.
- Low On-Resistance.
- Low Gate Threshold Voltage.
- Low Input Capacitance.
- Fast Switching Speed.
- Low Input/Output Leakage.
- Ultra-Small Surface Mount Package.
- ESD Protected Gate.
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. “Green” Device (Note 3).
- Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data.
- Case: SOT363.
- Case Material: Molded Plastic. “Green” Molding.
DMN63D1LDW-Diodes.pdf
