DMN63D8LDW Dual N-Channel MOSFET

Diodes Incorporated

Description

NEW PRODUCT Product Summary BVDSS 30V RDS(ON) 4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V ID TA = +25°C 200mA 260mA .
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it idea.

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Datasheet Specifications

Part number: DMN63D8LDW
Manufacturer: DIODES ↗ Incorporated
File Size: 590.78 KB
Datasheet: DMN63D8LDW-DiodesIncorporated.pdf
Description: Dual N-Channel MOSFET

Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For automo

Applications

* Applications
* DC-DC Converters
* Power Management Functions
* Battery Operated Systems and Solid-State Relays

DMN63D8LDW Distributors

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DMN63D8LDW Dual N-Channel MOSFET Diodes Incorporated

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