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DMN66D0LDW DUAL N-CHANNEL MOSFET

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Description

Product Summary BVDSS 60V RDS(on) Max 6Ω @ VGS = 5V 5Ω @ VGS = 10V ID TA = +25°C 90mA 115mA .
and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching perfor.

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Features

* Dual N-Channel MOSFET
* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Small Surface Mount Package
* ESD Protected Gate, 1KV (HBM)
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Applications

* This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

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