* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor, thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 &
DMP2006UFG Datasheet (391.05 KB)
DMP2006UFG
391.05 KB
P-channel mosfet.
DMP2006UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS -20V
RDS(ON) max
5.5mΩ @ VGS = -4.5V 7.5mΩ @ VGS = -2.5V
ID m.
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