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DMP2540UCB9 P-Channel MOSFET

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Description

ADVANCE INNEFWORPRMOADTIUOCNT DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ.@ VGS = -4.5V, TA = +25°C) VDSS -25V RDS(on) 33m.
and Applications This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance,.

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Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.62mm for Low Profile
* ESD = 6kV HBM Protection o

Applications

* This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data
* Case: U-WLB1515-9
* Terminal Connections: See Diagram Below
* Weight:

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