* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a Low Turn-On Potential
* CSP with Footprint 1.5mm × 1.5mm
* Height = 0.62mm for Low Profile
* ESD = 6kV HBM Protection o
DMP2540UCB9 Datasheet (384.38 KB)
DMP2540UCB9
384.38 KB
P-channel mosfet.
ADVANCE INNEFWORPRMOADTIUOCNT
DMP2540UCB9
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS -25V
RDS(on) 33m.
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