* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% Unclamped Inductive Switch (UIS) Test in Produc
DMT2004UFG Datasheet (307.77 KB)
DMT2004UFG
307.77 KB
N-channel mosfet.
Product Summary BVDSS 24V RDS(ON) max 5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.5V ID max TC = +25°C 70A 60A 45A DMT2004UFG N-CHANNEL .
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