DMT2004UFG N-Channel MOSFET

Diodes

Description

Product Summary BVDSS 24V RDS(ON) max 5.0mΩ @ VGS = 10V 6.5mΩ @ VGS = 4.5V 10.0mΩ @ VGS = 2.5V ID max TC = +25°C 70A 60A 45A DMT2004UFG N-CHANNEL .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea.

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Datasheet Specifications

Part number: DMT2004UFG
Manufacturer: DIODES ↗
File Size: 307.77 KB
Datasheet: DMT2004UFG-Diodes.pdf
Description: N-Channel MOSFET

Features

* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% Unclamped Inductive Switch (UIS) Test in Produc

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* Backlighting
* Power Management Functions
* DC-DC Converters Mechanical Data
* Case: PowerDI333

DMT2004UFG Distributors

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DMT2004UFG N-Channel MOSFET Diodes

Diodes DMT2004UFG-like datasheet