DMT10H010LSS N-CHANNEL MOSFET

Diodes

Description

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5m.
and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.

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Datasheet Specifications

Part number: DMT10H010LSS
Manufacturer: DIODES ↗
File Size: 347.50 KB
Datasheet: DMT10H010LSS-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “

Applications

* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.
* Backlighting
* Power Management Functions
* DC-DC Converters SO-8 S

DMT10H010LSS Distributors

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DMT10H010LSS N-CHANNEL MOSFET Diodes

Diodes DMT10H010LSS-like datasheet