Datasheet Details
- Part number
- DMT10H010LSS
- Manufacturer
- DIODES ↗
- File Size
- 347.50 KB
- Datasheet
- DMT10H010LSS-Diodes.pdf
- Description
- N-CHANNEL MOSFET
DMT10H010LSS Description
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5m.
and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
DMT10H010LSS Features
* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “
DMT10H010LSS Applications
* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch.
* Backlighting
* Power Management Functions
* DC-DC Converters
SO-8
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