DMT10H010LSSQ 100V N-CHANNEL MOSFET

DIODES

Description

DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

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Datasheet Specifications

Part number: DMT10H010LSSQ
Manufacturer: DIODES ↗
File Size: 576.98 KB
Datasheet: DMT10H010LSSQ-DIODES.pdf
Description: 100V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Backlighting
* Power management functions

DMT10H010LSSQ Distributors

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DMT10H010LSSQ 100V N-CHANNEL MOSFET DIODES

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