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DMT10H010LSSQ Datasheet - DIODES

DMT10H010LSSQ, 100V N-CHANNEL MOSFET

DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V .
and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.
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DMT10H010LSSQ-DIODES.pdf

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Datasheet Details

Part number:

DMT10H010LSSQ

Manufacturer:

DIODES ↗

File Size:

576.98 KB

Description:

100V N-CHANNEL MOSFET

Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Backlighting
* Power management functions

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