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DMT10H010LSSQ

100V N-CHANNEL MOSFET

DMT10H010LSSQ Features

* 100% Unclamped Inductive Switching (UIS) Test in Production

* Ensures More Reliable and Robust End Application

* High Conversion Efficiency

* Low RDS(ON)

* Minimizes On-State Losses

* Low Input Capacitance

* Fast Switching Speed

* Totally Lead-Free & Fully R

DMT10H010LSSQ Datasheet (576.98 KB)

Preview of DMT10H010LSSQ PDF

Datasheet Details

Part number:

DMT10H010LSSQ

Manufacturer:

DIODES ↗

File Size:

576.98 KB

Description:

100v n-channel mosfet.
DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V .

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DMT10H010LSSQ 100V N-CHANNEL MOSFET DIODES

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