Datasheet Details
- Part number
- DMT10H010LSSQ
- Manufacturer
- DIODES ↗
- File Size
- 576.98 KB
- Datasheet
- DMT10H010LSSQ-DIODES.pdf
- Description
- 100V N-CHANNEL MOSFET
DMT10H010LSSQ Description
DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V .
and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications.
DMT10H010LSSQ Features
* 100% Unclamped Inductive Switching (UIS) Test in Production
DMT10H010LSSQ Applications
* This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
* Backlighting
* Power management functions
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