* 100% Unclamped Inductive Switching
* Ensures More Reliable and Robust End Application
* Low RDS(ON)
* Minimizes On-State Losses
* Fast Switching Speed
* Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Descrip
DMT10H010SPS Datasheet (515.39 KB)
DMT10H010SPS
515.39 KB
100v n-channel mosfet.
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 11.5mΩ @ VGS = 6V
ID TC = +25°C
113A
98A
Green
DMT10H010SPS
100V N-CHANNEL ENHANCEMENT .
📁 Related Datasheet
DMT10H010LCT - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
DMT10H010LCT
FEATURES ·Drain Current –ID= 98A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source .
DMT10H010LCT - N-CHANNEL MOSFET
(Diodes)
Green
DMT10H010LCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) 9.5mΩ @VGS = 10V
Package TO220AB
ID TC = +25°C
98A.
DMT10H010LK3 - 100V N-CHANNEL MOSFET
(Diodes)
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 11.3mΩ @ VGS = 6.0V
ID TC = +25°C
68.8A
60.7A
Green DMT10H010LK3
100V N-CHANNEL ENHANCEME.
DMT10H010LPS - N-CHANNEL MOSFET
(Diodes)
ADVANCED INFORMATION
Product Summary
Green DMT10H010LPS
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
Features
BVDSS 100V
RDS(ON) Max 8.3mΩ @ VGS.
DMT10H010LSS - N-CHANNEL MOSFET
(Diodes)
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT
DMT10H010LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9.5m.
DMT10H010LSSQ - 100V N-CHANNEL MOSFET
(DIODES)
DMT10H010LSSQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V
.
DMT10H014LSS - 100V N-CHANNEL MOSFET
(Diodes)
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT
DMT10H014LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ.
DMT10H015LCG - 100V N-CHANNEL MOSFET
(Diodes)
DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 15mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V
ID Max TC = +25°C
34.
