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DMT10H003SPSW

100V N-CHANNEL MOSFET

DMT10H003SPSW Features

* BVDSS 100V RDS(ON) Max 3mΩ @ VGS = 10V 5mΩ @ VGS = 6V ID Max TC = +25°C 152A 118A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DMT10H003SPSW General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* 100% Unclamped Inductive Switching (UIS) Test in Production

* Ensures More Reliable an.

DMT10H003SPSW Datasheet (704.32 KB)

Preview of DMT10H003SPSW PDF

Datasheet Details

Part number:

DMT10H003SPSW

Manufacturer:

DIODES ↗

File Size:

704.32 KB

Description:

100v n-channel mosfet.

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DMT10H009SPS - 100V N-CHANNEL MOSFET (DIODES)
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DMT10H003SPSW 100V N-CHANNEL MOSFET DIODES

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