Datasheet Details
- Part number
- DMT10H009SCG
- Manufacturer
- DIODES ↗
- File Size
- 492.54 KB
- Datasheet
- DMT10H009SCG-DIODES.pdf
- Description
- 100V N-CHANNEL MOSFET
DMT10H009SCG Description
DMT10H009SCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V ID TC = +25°C 48A .
and Applications
This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.
DMT10H009SCG Features
* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “
DMT10H009SCG Applications
* This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
* Backlighting
* Power Management Functions
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