DMT10H009LCG 100V N-Channel MOSFET

DIODES

Description

DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V ID TC = +25°C 47A.
and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.

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Datasheet Specifications

Part number: DMT10H009LCG
Manufacturer: DIODES ↗
File Size: 500.86 KB
Datasheet: DMT10H009LCG-DIODES.pdf
Description: 100V N-Channel MOSFET

Features

* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “

Applications

* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
* Backlighting
* Power Management Functions

DMT10H009LCG Distributors

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DMT10H009LCG 100V N-Channel MOSFET DIODES

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