DMT10H009LCG Datasheet - DIODES

100V N-Channel MOSFET

DMT10H009LCG Features

* 100% Unclamped Inductive Switch (UIS) Test in Production

* High Conversion Efficiency

* Low RDS(ON)

* Minimizes On State Losses

* Low Input Capacitance

* Fast Switching Speed

* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

* Halogen and Antimony Free. “

DMT10H009LCG General Description

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch. * Backlighting * Power Management Functions * DC-DC Co.

DMT10H009LCG Datasheet (500.86 KB)

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Datasheet Details

Part number:

DMT10H009LCG

Manufacturer:

DIODES ↗

File Size:

500.86 KB

Description:

100v n-channel mosfet.
DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V ID TC = +25°C 47A.

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DMT10H009LCG 100V N-Channel MOSFET DIODES

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DMT10H009LCG Features

DMT10H009LCG General Description

Datasheet Details

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