Datasheet Details
- Part number
- DMT10H009LCG
- Manufacturer
- DIODES ↗
- File Size
- 500.86 KB
- Datasheet
- DMT10H009LCG-DIODES.pdf
- Description
- 100V N-Channel MOSFET
DMT10H009LCG Description
DMT10H009LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V ID TC = +25°C 47A.
and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
DMT10H009LCG Features
* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “
DMT10H009LCG Applications
* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
* Backlighting
* Power Management Functions
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