* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* Totally Lead-Free & Fully RoH
DMT10H009LSS Datasheet (462.45 KB)
DMT10H009LSS
462.45 KB
100v n-channel mosfet.
DMT10H009LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max
9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V
ID Max TA = +25°C
1.
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