DMT10H009LSS 100V N-CHANNEL MOSFET

DIODES

Description

DMT10H009LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V ID Max TA = +25°C 1.
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal fo.

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Datasheet Specifications

Part number: DMT10H009LSS
Manufacturer: DIODES ↗
File Size: 462.45 KB
Datasheet: DMT10H009LSS-DIODES.pdf
Description: 100V N-CHANNEL MOSFET

Features

* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* 100% Unclamped Inductive Switching (UIS) Test in Production

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* High Frequency Switching
* Synchronous Rectification

DMT10H009LSS Distributors

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DMT10H009LSS 100V N-CHANNEL MOSFET DIODES

DIODES DMT10H009LSS-like datasheet