Part number:
DMT10H009LPS
Manufacturer:
File Size:
455.57 KB
Description:
100v n-channel mosfet.
* BVDSS 100V RDS(ON) Max 8mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V ID Max TC = +25°C 90A 74A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management a
DMT10H009LPS Datasheet (455.57 KB)
DMT10H009LPS
455.57 KB
100v n-channel mosfet.
📁 Related Datasheet
DMT10H009LCG - 100V N-Channel MOSFET
(DIODES)
DMT10H009LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 8.8mΩ @ VGS = 10V 12.9mΩ @ VGS = 4.5V
ID TC = +25°C
47A.
DMT10H009LFG - 100V N-CHANNEL MOSFET
(DIODES)
Green
DMT10H009LFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
100V
8.5mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V
ID MAX .
DMT10H009LK3 - 100V N-Channel MOSFET
(DIODES)
Green
DMT10H009LK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9mΩ @ VGS = 10V 13mΩ @ VGS = 4.5V
ID Max TC = +.
DMT10H009LSS - 100V N-CHANNEL MOSFET
(DIODES)
DMT10H009LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max
9mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V
ID Max TA = +25°C
1.
DMT10H009SCG - 100V N-CHANNEL MOSFET
(DIODES)
DMT10H009SCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9.5mΩ @ VGS = 10V
ID TC = +25°C
48A
Description and Ap.
DMT10H009SK3 - 100V N-CHANNEL MOSFET
(DIODES)
Green
DMT10H009SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9.1mΩ @ VGS = 10V
ID Max TC = +25°C
91A
Descri.
DMT10H009SPS - 100V N-CHANNEL MOSFET
(DIODES)
.
DMT10H009SSS - 100V N-CHANNEL MOSFET
(DIODES)
DMT10H009SSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9.2mΩ @ VGS = 10V
ID Max TA = +25°C
12A
Features and B.