Datasheet Details
- Part number
- DMT10H014LSS
- Manufacturer
- DIODES ↗
- File Size
- 404.47 KB
- Datasheet
- DMT10H014LSS-Diodes.pdf
- Description
- 100V N-CHANNEL MOSFET
DMT10H014LSS Description
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H014LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 15mΩ.
and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
DMT10H014LSS Features
* 100% Unclamped Inductive Switch (UIS) Test in Production
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “
DMT10H014LSS Applications
* This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
* Backlighting
* Power Management Functions
* DC-DC Converters
Mechanica
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