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DSS8110Y NPN LOW SATURATION TRANSISTOR

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Description

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Datasheet Specifications

Part number
DSS8110Y
Manufacturer
DIODES ↗
File Size
199.77 KB
Datasheet
DSS8110Y-Diodes.pdf
Description
NPN LOW SATURATION TRANSISTOR

Features

* BVCEO > 100V
* IC = 1A high Continuous Collector Current
* ICM = 3A Peak Pulse Current
* RCE(sat) = 200mΩ for a Low Equivalent On-Resistance
* Low Saturation Voltage VCE(sat) < 200mV @ 1A
* Complementary PNP Type Available (DSS9110Y)
* Totally Lead-Free & Fully RoHS com

Applications

* shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchase

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