FMMT634Q Datasheet, Transistor, Diodes

FMMT634Q Features

• Transistor
• BVCEO > 100V
• IC = 900mA high Continuous Collector Current
• ICM = 5A Peak Pulse Current
• 625mW Power dissipation
• hFE > 5k up to 2A for hig

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FMMT634Q

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DIODES ↗

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📄 Datasheet

Description:

Npn darlington transistor. This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features

FMMT634Q Application

• Applications Features
• BVCEO > 100V
• IC = 900mA high Continuous Collector Current
• ICM = 5A Peak Pulse Current

TAGS

FMMT634Q

Diodes

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