FMMT619 - NPN SILICON LOW SATURATION TRANSISTOR
FMMT619 Features
* BVCEO > 50V
* IC = 2A Continuous Collector Current
* 625mW Power Dissipation
* Low Saturation Voltage VCE(sat) < 200mV @ 1A
* RCE(sat) = 68mΩ for a Low Equivalent On-Resistance
* hFE Characterised up to 6A for High Current Gain Hold-up
* Complementary PNP Type: DIODES™
