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FMMT620 - SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

General Description

Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques.

Users are provided with high Hfe and very low sat performance ensuring low on state losses.

Key Features

  • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.5A Continuous Collector Current SOT23 package SOT23.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3.0A IC=1.