DFK1N60 Datasheet, Mosfet, DnI

DFK1N60 Features

• Mosfet High ruggedness RDS(on) (Max 11.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 0.8A 3. Source Gate Charge (Typical 7nC) Improved dv/dt Capab

PDF File Details

Part number:

DFK1N60

Manufacturer:

DnI

File Size:

832.18kb

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📄 Datasheet

Description:

N-channel mosfet. This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intend

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DFK1N60

DnI

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