DFK1N60

N-Channel MOSFET

DnI

DFK1N60 Features

* High ruggedness RDS(on) (Max 11.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 0.8A 3. Source Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested General Description This N-channel enhancement mode field-effect power transistor usin

DFK1N60 General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The SOT-223 pkg is well suited for c.

DFK1N60 Datasheet (832.18 KB)

DFK1N60 Datasheet Preview — Preview of DFK1N60 PDF

Datasheet Details

Part number:

DFK1N60

Manufacturer:

DnI

File Size:

832.18 KB

Description:

N-channel mosfet.

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DFK1N60 N-Channel MOSFET DnI

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DFK1N60 Features

DFK1N60 General Description

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