DFR1N60 Datasheet, Mosfet, DnI

DFR1N60 Features

  • Mosfet High ruggedness RDS(on) (Max 11.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 1.1A 3. Source Gate Charge (Typical 7nC) Improved dv/dt Capab

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Part number:

DFR1N60

Manufacturer:

DnI

File Size:

650.68kb

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📄 Datasheet

Description:

N-channel mosfet. This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intend

Datasheet Preview: DFR1N60 📥 Download PDF (650.68kb)
Page 2 of DFR1N60 Page 3 of DFR1N60

TAGS

DFR1N60
N-Channel
MOSFET
DnI

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