3400 Datasheet, Mosfet, Doingter

3400 Features

  • Mosfet 1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good h

PDF File Details

Part number:

3400

Manufacturer:

Doingter

File Size:

2.39MB

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used i

Datasheet Preview: 3400 📥 Download PDF (2.39MB)
Page 2 of 3400 Page 3 of 3400

3400 Application

  • Applications Features: 1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench t

TAGS

3400
N-Channel
MOSFET
Doingter

📁 Related Datasheet

3400 - 5-Series Chipset (Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset Datasheet January 2012 Document Number: 322169-004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN.

3400 - N-Channel MOSFET (GOFORD)
GOFORD DESCRIPTION The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .

3401 - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

3401 - P-Channel MOSFET (CXW)
 P-channel Enhancement Mode MOSFET           The   uses  advanced  trench  technology  to  provide  excellent  RDS(ON)  and  low  gate  charge.  Thi.

3401 - P-channel-enhanced MOS field-effect transistor (ChipSourceTek)
3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S .

3401 - MOSFET (GFD)
3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..

3402A - (3402xA - 3410xA) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3402A - 3410A 3402FA - 3410FA 3.

3402B - (3402xB - 3410xB) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3402B - 3410B 3402FB - 3410FB 3.

3402FA - (3402xA - 3410xA) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3402A - 3410A 3402FA - 3410FA 3.

3402FB - (3402xB - 3410xB) Three Phase Bridge (VMI)
.. 200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time 3402B - 3410B 3402FB - 3410FB 3.

Stock and price

part
Goford Semiconductor
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
DigiKey
3400
4274 In Stock
Qty : 1000 units
Unit Price : $0.08
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts