* I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)
* (max) IC (max) IC(PK) 1200V 2.2V 100A 200A
* (Measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters Motor Controllers 7(E2) 6(G2
DIM100WHS12-A000 Datasheet (322.16 KB)
DIM100WHS12-A000
Dynex Semiconductor
322.16 KB
Igbt power module.
www.DataSheet4U.com
DIM100WHS12-A000
DIM100WHS12-A000
Half Bridge IGBT Module
Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004
.
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