XTR1K1210 High Temperature 10A 1200V SiC Schottky Diode

EASii

Description

XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 * June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3 XT.
XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach.

📥 Download Datasheet

XTR1K1210 Datasheet Preview — Preview of XTR1K1210 PDF

Datasheet Specifications

Part number: XTR1K1210
Manufacturer: EASii
File Size: 438.13 KB
Datasheet: XTR1K1210-EASii.pdf
Description: High Temperature 10A 1200V SiC Schottky Diode

Features

* Reverse voltage up to 1200V.
* Operational beyond the -60°C to +230°C temperature range.
* Positive temperature coefficient for safe operation and ease paralleling.
* Extremely fast switching not dependent on temperature.
* Essentially no reverse or forward

XTR1K1210 Distributors

📁 Related Datasheet

XTR101 XTR103 XTR104 XTR105 XTR106 XTR108

📌 All Tags

XTR1K1210 High Temperature 10A 1200V SiC Schottky Diode EASii

EASii XTR1K1210-like datasheet