XTR1K1210 Datasheet - EASii

XTR1K1210 High Temperature 10A 1200V SiC Schottky Diode

XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C. This diode has zero reverse recovery charge, which makes it ideally suited for high-frequency and high-efficiency power systems with minimum o.

XTR1K1210 Features

* Reverse voltage up to 1200V.

* Operational beyond the -60°C to +230°C temperature range.

* Positive temperature coefficient for safe operation and ease paralleling.

* Extremely fast switching not dependent on temperature.

* Essentially no reverse or forward

XTR1K1210-EASii.pdf