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XTR1K1210 - High Temperature 10A 1200V SiC Schottky Diode

XTR1K1210 Description

XTR1K1210 High Temperature 10A, 1200V SiC Schottky Diode Data Sheet Rev 3 * June 2024 (DS-00275-12) PRODUCTION XTRPPPPP YYWWANN TO257-3 XT.
XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach.

XTR1K1210 Features

* Reverse voltage up to 1200V.
* Operational beyond the -60°C to +230°C temperature range.
* Positive temperature coefficient for safe operation and ease paralleling.
* Extremely fast switching not dependent on temperature.
* Essentially no reverse or forward

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Datasheet Details

Part number
XTR1K1210
Manufacturer
EASii
File Size
438.13 KB
Datasheet
XTR1K1210-EASii.pdf
Description
High Temperature 10A 1200V SiC Schottky Diode

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High Temperature 10A 1200V SiC Schottky Diode EASii
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