XTR1K1210 - High Temperature 10A 1200V SiC Schottky Diode
XTR1K1210 is 10A, 1200V 4H-SiC junction barrier Schottky diode able to reliably operate from -60°C to +230°C, with junction temperature able to reach +250°C.
This diode has zero reverse recovery charge, which makes it ideally suited for high-frequency and high-efficiency power systems with minimum o
XTR1K1210 Features
* Reverse voltage up to 1200V.
* Operational beyond the -60°C to +230°C temperature range.
* Positive temperature coefficient for safe operation and ease paralleling.
* Extremely fast switching not dependent on temperature.
* Essentially no reverse or forward
