EDI8L21664V - External SRAM Memory Solution

EDI

EDI8L21664V Datasheet Preview — Preview of EDI8L21664V PDF

Datasheet Details

Part number	EDI8L21664V
Manufacturer	EDI
File Size	90.09 KB
Description	External SRAM Memory Solution
Datasheet	EDI8L21664V_EDI.pdf

EDI8L21664V Product details

Description

Pin Symbol A0-A14 A15A A15B WE CE1 CE2 G DQ0-15 Vcc Vss Type Input Input Input Input Input Input Input Input/Output Supply Ground Description Addresses Addresses: A15 on Bank 'A' of memory Addresses: A15 on Bank 'B' of memory Write Enable: This active LOW input allows a full 16-bit WRITE to occur.

Features

DSP Memory Solution.
Texas Instruments TMS320C54x 3.3V Operating Supply Voltage Access Times of 10, 12 and 15ns Single Write Control and Output Enable Lines One Chip Enable Line per Memory Bank 50% Space Savings vs. Monolithic TSOPs Upgrade Path Available in Same Footprint Multiple VCC and VSS Pins Reduced Inductance and Capacitance 74 pin BGA, JEDEC MO-151 The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device.

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Published: Nov 30, 2006 |