EG1181
EGmicro
544.18kb
Power mos tube / igbt gate driver.
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EG1181 - 48V battery powered systems step-down switching power
(EGmicro)
ELECTRONIC GIANT
EG1181
48V
2010 ©
REV 1.3
EG1181 V1.3
48V
V1.0 V1.1 2010 10 22 2011 03 03 EG1181 1. ADJ 2. EG1181 3. EG1181.
EG1182 - 48V battery powered systems step-down switching power
(EGmicro)
.
EG110B - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110D - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110G - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110J - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110K - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110M - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG1 - Fast Recovery Diode
(Sanken electric)
VRM = 400 V, IF(AV) = 0.8 A, trr = 100 ns Fast Recovery Diode
EG1
Data Sheet
Description
The EG1 is a fast recovery diode of 400 V / 0.8 A. The maxi.
EG1 - HIGH EFFICIENCY RECTIFIER
(GALAXY ELECTRICAL)
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EG1Y(Z)--- EG1A(Z)
VOLTAGE RANGE: 70--- 600 V CURRENT: 1.1---0.6 A
FEATURES Low cost Diffused junctio.
