EG1181
EGmicro
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48v battery powered systems step-down switching power.
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EG1181 - Power MOS tube / IGBT gate driver
(EGmicro)
ELECTRONIC GIANT
EG3012
MOS、IGBT
2012 ©
REV 1.0
EG3012 V1.0
MOS 、IGBT
V1.0 2012 06 06 EG3012
2010 © .EGmicro. 2 / 12
1..
EG1182 - 48V battery powered systems step-down switching power
(EGmicro)
.
EG110B - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110D - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110G - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110J - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110K - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG110M - GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
(Zowie)
EG110B THRU EG110M
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 1.0 Ampere
R-1
.787(2.
EG1 - Fast Recovery Diode
(Sanken electric)
VRM = 400 V, IF(AV) = 0.8 A, trr = 100 ns Fast Recovery Diode
EG1
Data Sheet
Description
The EG1 is a fast recovery diode of 400 V / 0.8 A. The maxi.
EG1 - HIGH EFFICIENCY RECTIFIER
(GALAXY ELECTRICAL)
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EG1Y(Z)--- EG1A(Z)
VOLTAGE RANGE: 70--- 600 V CURRENT: 1.1---0.6 A
FEATURES Low cost Diffused junctio.
