EPC2214 Datasheet - EPC

EPC2214 Power Transistor

eGaN® FET DATASHEET EPC2214 Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 20 mΩ ID , 10 A, D G AEC-Q101 S EPC2214 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 60 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and ma.

EPC2214 Datasheet (1.41 MB)