M15F1G1664A
M15F1G1664A is 8M x 16 Bit x 8 Banks DDR3 SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
Feature
- Interface and Power Supply
- SSTL_15: VDD/VDDQ = 1.5V(±0.075V)
- JEDEC DDR3 pliant
- 8n Prefetch Architecture
- Differential Clock (CK/ CK ) and Data Strobe (DQS/ DQS )
- Double-data rate on DQs, DQS and DM
- Data Integrity
- Auto Refresh and Self Refresh Modes
- Power Saving Mode
- Partial Array Self Refresh(PASR)
- Power Down Mode
- Signal Integrity
- Configurable DS for system patibility
- Configurable On-Die Termination
- ZQ Calibration for DS/ODT impedance accuracy via
- Signal Synchronization external ZQ pad (240 ohm ± 1%)
8M x 16 Bit x 8 Banks DDR3 SDRAM
- Write Leveling via MR settings
- Read Leveling via MPR
- Programmable Functions
- CAS Latency (5/6/7/8/9/10/11/12/13/14/15/16)
- CAS Write Latency (5/6/7/8/9/10/11/12)
- Additive Latency (0/CL-1/CL-2)
- Write Recovery Time (5/6/7/8/10/12/14/16)
- Burst Type (Sequential/Interleaved)
- Burst Length (BL8/BC4/BC4 or 8 on the fly)
- Self Refresh Temperature Range(Normal/Extended)
- Output Driver Impedance (34/40)
- On-Die Termination of Rtt_Nom(20/30/40/60/120)
- On-Die Termination of Rtt_WR(60/120)
- Precharge Power Down (slow/fast)
- Not Support Write with Auto Precharge for Data Rate
2400Mbps
Ordering Information
Product ID
Max Freq.
M15F1G1664A- GHBG2C M15F1G1664A- EFBG2C M15F1G1664A- DEBG2C M15F1G1664A- GHBG2CS M15F1G1664A- EFBG2CS M15F1G1664A- DEBG2CS
1200MHz 1066MHz 933MHz 1200MHz 1066MHz...
