ET-20N50 Datasheet - ESTEK

ET-20N50 - N-Channel MOSFET

This Power MOSFET is manufactured advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power fac.

ET-20N50 Features

* RDS(on) (Max 0.26 Ω )@VGS=10V

* Gate Charge (Typical 90nC)

* Improved dv/dt Capability, High Ruggedness

* 100% Avalanche Tested

* Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain

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* { 3. Source General Descrip

ET-20N50-ESTEK.pdf