1N5762A
ETC
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Silicon 3-layer bilateral triggers.
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1N5762 - SILICON 3-LAYER BILATERAL TRIGGERS
(ETC)
1N5758,A thru 1N5762,A (SILICON)
SILICON 3-LAYER BILATERAL TRIGGERS
Annular, two terminal devices that exhibit bi-directional negative resistance.
1N5760 - SILICON 3-LAYER BILATERAL TRIGGERS
(ETC)
1N5758,A thru 1N5762,A (SILICON)
SILICON 3-LAYER BILATERAL TRIGGERS
Annular, two terminal devices that exhibit bi-directional negative resistance.
1N5760A - SILICON 3-LAYER BILATERAL TRIGGERS
(ETC)
1N5758,A thru 1N5762,A (SILICON)
SILICON 3-LAYER BILATERAL TRIGGERS
Annular, two terminal devices that exhibit bi-directional negative resistance.
1N5761 - SILICON 3-LAYER BILATERAL TRIGGERS
(ETC)
1N5758,A thru 1N5762,A (SILICON)
SILICON 3-LAYER BILATERAL TRIGGERS
Annular, two terminal devices that exhibit bi-directional negative resistance.
1N5761A - SILICON 3-LAYER BILATERAL TRIGGERS
(ETC)
1N5758,A thru 1N5762,A (SILICON)
SILICON 3-LAYER BILATERAL TRIGGERS
Annular, two terminal devices that exhibit bi-directional negative resistance.
1N5767 - PIN Diodes
(AVAGO)
1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating
Data Sheet
Descriptio.
1N5767 - PIN Diodes
(Agilent)
..
PIN Diodes for RF Switching and Attenuating
Technical Data
1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3.
1N5767 - PIN Diode
(Microsemi)
WWW.Microsemi .COM
1N5767 (5082-3080) SERIES 1N5957SERIES
DESCRIPTION
The 1N5767 and the 1N5957 PIN diodes are based upon low capacitance PIN chips.
1N5767 - PIN Diodes
(HP)
PIN Diodes Reliability Data
1N5767 5082-3080 5082-3188
Description
For applications requiring
ponent reliability estimation,
Hewlett-Packard p.
1N5700 - GENERAL PURPOSE ABRUPT VARACTOR DIODES
(Knox SemiconductorInc)
GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5681 TO 1N5709
PART NUMBER
CAPACITANCE @ 4Vdc 1 MHz (pF)
MIN QUALITY FACTOR @ 4Vdc F = 50 MHz
CAPACITANCE.
