1N5761 - SILICON 3-LAYER BILATERAL TRIGGERS
1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS Annular, two terminal devices that exhibit bi-directional negative resistance switching characteristics.
These economical, durable devices have been developed for use in thyristor triggering circuits for lamp drivers and universal motor speed controls.
Switching Voltage Range - 20 to 36 Volts Nominal Symmetrical Characteristics Passivated Surface for Reliability and Uniformity SILICON BILATERAL T
