1N5762 Datasheet - ETC

1N5762 SILICON 3-LAYER BILATERAL TRIGGERS

1N5758,A thru 1N5762,A (SILICON) SILICON 3-LAYER BILATERAL TRIGGERS Annular, two terminal devices that exhibit bi-directional negative resistance switching characteristics. These economical, durable devices have been developed for use in thyristor triggering circuits for lamp drivers and universal motor speed controls. Switching Voltage Range - 20 to 36 Volts Nominal Symmetrical Characteristics Passivated Surface for Reliability and Uniformity SILICON BILATERAL T.

1N5762 Datasheet (126.64 KB)