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2N5058S Datasheet - ETC

2N5058S NPN SILICON ANNULAR TRANSISTORS

2N5058S (SILICON) NPN SILICON ANNULAR TRANSISTORS .. designed for high voltage amplifier and driver applications. High Collector Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S DC Current Gain Specified 5.0 mAdc to 100 mAdc Coliector Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc NPNSILICON AMPLIFIER/DRIVER TRANSISTORS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage.

2N5058S-ETC.pdf

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Datasheet Details

Part number:

2N5058S

Manufacturer:

ETC

File Size:

107.34 KB

Description:

Npn silicon annular transistors.

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2N5058S 2N5058S NPN SILICON ANNULAR TRANSISTORS ETC

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