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2N5058S - NPN SILICON ANNULAR TRANSISTORS

2N5058S Description

2N5058S (SILICON) NPN SILICON ANNULAR TRANSISTORS * ..designed for high *voltage amplifier and driver applications.* High Collector<.

2N5058S Applications

* High Collector
* Emitter Breakdown Voltage BVCEO = 300 Vdc (Min) - 2N5058S
* DC Current Gain Specified 5.0 mAdc to 100 mAdc
* Coliector
* Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 30 mAdc NPNSILICON AMPLIFIER/DRIVER TRANSISTORS
* MAXIMUM RATINGS

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Datasheet Details

Part number
2N5058S
Manufacturer
ETC
File Size
107.34 KB
Datasheet
2N5058S-ETC.pdf
Description
NPN SILICON ANNULAR TRANSISTORS

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NPN SILICON ANNULAR TRANSISTORS ETC
ETC 2N5058S-like datasheet