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2N5070 NPN SILICON RF POWER TRANSISTORS

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Description

2N5070 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTORS designed primarily for applications.s.high-power linear amplifier from 2.0 to 75 MHz..

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Datasheet Specifications

Part number
2N5070
Manufacturer
ETC
File Size
417.88 KB
Datasheet
2N5070-ETC.pdf
Description
NPN SILICON RF POWER TRANSISTORS

Applications

* s. high-power linear amplifier from 2.0 to 75 MHz.
* Optimized for Operation from a 28-Volt Supply
* Power Out@ 28 Vdc, 30 MHz - 25 W (PEP)
* Intermodulation Distortion at 25 W (PEP) IMD = 30 dB (Max)
* Isothermal-Resistor Design Results in Rugged Device 25 W (PEP) -

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