2N5070 Datasheet - ETC

2N5070 NPN SILICON RF POWER TRANSISTORS

2N5070 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTORS designed primarily for applications.s. high-power linear amplifier from 2.0 to 75 MHz. Optimized for Operation from a 28-Volt Supply Power Out@ 28 Vdc, 30 MHz - 25 W (PEP) Intermodulation Distortion at 25 W (PEP) IMD = 30 dB (Max) Isothermal-Resistor Design Results in Rugged Device 25 W (PEP) - 30 MHz RF POWER TRANSISTOR NPN SILICON 'MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector.

2N5070-ETC.pdf