2N5463 - P-channel FET
2N5460 (SILICON) thru 2N5465 P-channel depletion mode (Type A) junction fieldeffect transistors designed for use in general-purpose amplifier applications. MAXIMUM RATINGS Rating 2N5460 2N5463 2N5461 2N5464 Symbol 2N5462 2N5465 Unit Drain-Gate Voltage VDG 40 60 Vdc Reverse Gate-Source Voltage VGS(r) 40 60 Vdc Forward Gate Current IG(f) 10 mAdc CASE 29 e (TO-92l 1 1 3 STYLE 7 PIN 1 SOURCE 1 DRAIN 3. GATE Total Device Dissipation @ TA = 25 C PDI'} 310 mW Derate above 2.
