2N5847
ETC
245.52kb
Npn silicon rf power transistors.
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2N5840 - HIGH-VOLTAGE/ HIGH-POWER SILICON N-P-N POWER TRANSISTORS
(Motorola Inc)
.
2N5840 - Bipolar NPN Device
(Seme LAB)
2N5840
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N5840 - Power Transistors
(RCA)
D\lCIBLJI]
Solid State Division
FileNo. 410
Power Transistors
2N5838 2N5839 2N5840
RCA 2N5838;2N5839 and 2N5840** are epitaxial silicon n-p-n power .
2N5840 - (2N5838 - 2N5840) Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2N5838 2N5839 2N5840
DESCRIPTION ·With TO-3 package.
2N5841 - NPN SILICON RF TRANSISTORS
(ETC)
2N5841 (SILICON) 2N5842
NPN SILICON RF TRANSISTORS
. designed to provide ultra·fast switching times in current· mode circuits at collector currents t.
2N5842 - NPN SILICON RF TRANSISTORS
(ETC)
2N5841 (SILICON) 2N5842
NPN SILICON RF TRANSISTORS
. designed to provide ultra·fast switching times in current· mode circuits at collector currents t.
2N5845 - NPN SILICON ANNULAR TRANSISTORS
(ETC)
2N5845 (SILICON) 2N5845A
NPN SILICON ANNULAR TRANSISTORS
. designed for high·current saturated switching and core driver applications.
• Fast Switchi.
2N5845A - NPN SILICON ANNULAR TRANSISTORS
(ETC)
2N5845 (SILICON) 2N5845A
NPN SILICON ANNULAR TRANSISTORS
. designed for high·current saturated switching and core driver applications.
• Fast Switchi.
2N5846 - NPN SILICON RF POWER TRANSISTORS
(ETC)
2N5846 (SILICON) 2N5847
The RFLine
NPN SILICON RF POWER TRANSISTORS
3.5 W. 7.0 W - 50 MHz RFPOWER
TRANSISTORS
NPN SILICON
· .. designed primarily f.
2N5848 - NPN SILICON RF POWER TRANSISTOR
(ETC)
2N5848 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
· .. designed primarily for use in large-signal amplifier driver and output stages, the .
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