Datasheet4U Logo Datasheet4U.com

2N5865 Datasheet - ETC

2N5865 PNP SILICON ANNULAR TRANSISTOR

2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR . designed where high current, high voltage conditions are require ments for general purpose switching and amplifier applications. Collector Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc DC Current Gain Specified - 1.0 mA to 500 mA Turn On Time .. ton = 120 ns (Max) @ IC = 500 mAdc PNPSILICON GENERAL-PURPOSE TRANSISTOR >MAXIMUM RATINGS Rating Collector Emitter Voltag.

2N5865 Datasheet (101.55 KB)

Preview of 2N5865 PDF
2N5865 Datasheet Preview Page 2

Datasheet Details

Part number:

2N5865

Manufacturer:

ETC

File Size:

101.55 KB

Description:

Pnp silicon annular transistor.

📁 Related Datasheet

2N5861 NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR (ETC)

2N5861 SWITCHING TRANSISTOR (Motorola)

2N5862 NPN SILICON RF POWER TRANSISTOR (ETC)

2N5864 PNP SILICON ANNULAR TRANSISTOR (ETC)

2N5864 Bipolar PNP Device (Seme LAB)

2N5867 Bipolar PNP Device (Seme LAB)

2N5867 (2N5867 / 2N5868) Silicon PNP Power Transistor (SavantIC)

2N5868 (2N5867 / 2N5868) Silicon PNP Power Transistor (SavantIC)

TAGS

2N5865 PNP SILICON ANNULAR TRANSISTOR ETC

2N5865 Distributor