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2N5865 - PNP SILICON ANNULAR TRANSISTOR

2N5865 Description

2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR * .designed where high *current, high *voltage conditions are require * ments for genera.

2N5865 Applications

* Collector
* Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc
* DC Current Gain Specified - 1.0 mA to 500 mA
* Turn
* On Time . . ton = 120 ns (Max) @ IC = 500 mAdc PNPSILICON GENERAL-PURPOSE TRANSISTOR >MAXIMUM RATINGS Rating Collector
* Emitter Voltage

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Datasheet Details

Part number
2N5865
Manufacturer
ETC
File Size
101.55 KB
Datasheet
2N5865-ETC.pdf
Description
PNP SILICON ANNULAR TRANSISTOR

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PNP SILICON ANNULAR TRANSISTOR ETC
ETC 2N5865-like datasheet