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2N5865 Datasheet - ETC

2N5865 PNP SILICON ANNULAR TRANSISTOR

2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR . designed where high current, high voltage conditions are require ments for general purpose switching and amplifier applications. Collector Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc DC Current Gain Specified - 1.0 mA to 500 mA Turn On Time .. ton = 120 ns (Max) @ IC = 500 mAdc PNPSILICON GENERAL-PURPOSE TRANSISTOR >MAXIMUM RATINGS Rating Collector Emitter Voltag.

2N5865-ETC.pdf

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Datasheet Details

Part number:

2N5865

Manufacturer:

ETC

File Size:

101.55 KB

Description:

Pnp silicon annular transistor.

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2N5865 2N5865 PNP SILICON ANNULAR TRANSISTOR ETC

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