2N5861 Datasheet - ETC

2N5861 NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR

2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER . designed for medium current, high speed switching applications. Ideally suited for ferrite core memory driver circuits. Collector Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc Low Coliector Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc Low Coliector Base Capacitance Ccb ~ 7.0 pF (Max) @ VCB ~ 10 Vdc Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 n.

2N5861-ETC.pdf