Datasheet Details
Part number:
2N5861
Manufacturer:
ETC
File Size:
247.02 KB
Description:
NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR
2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER .
designed for medium *current, high *speed switching applications.
Ideally suited for ferrite core memory driver circuits.
* Collector *Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc * Low Coliector *Emit
2N5861, NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR
2N5861 (SILICON) NPN SILICON ANNULAR MEMORY DRIVER .
designed for medium current, high speed switching applications.
Ideally suited for ferrite core memory driver circuits.
Collector Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc Low Coliector Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc Low Coliector Base Capacitance Ccb ~ 7.0 pF (Max) @ VCB ~ 10 Vdc Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 n
2N5861 Distributor
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