2N5990
ETC
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Power transistors.
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2N5991 - 12 AMPERE POWER TRANSISTORS
(Motorola Inc)
.
2N5991 - POWER TRANSISTORS
(ETC)
2N59S6 2N59S72N59SS PNP (SILICON) 2N59S9 2N5990 2N5991 NPN
HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
· .. designed for use in genera.
2N5991 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage ·10.
2N5900 - GERMANIUM PNP POWER TRANSISTORS
(ETC)
2N5887 thru 2N590 1 (GERMANIUM)
GERMANIUM PNP POWER TRANSISTORS
· .. designed for low frequency switching and amplifier applications requiring to 7.0.
2N5901 - GERMANIUM PNP POWER TRANSISTORS
(ETC)
2N5887 thru 2N590 1 (GERMANIUM)
GERMANIUM PNP POWER TRANSISTORS
· .. designed for low frequency switching and amplifier applications requiring to 7.0.
2N5902 - MONOLITHIC DUAL N-CHANNEL JFET
(Intersil Corporation)
.
2N5902 - dual n-channel JFET
(Siliconix)
matched dual n-channel JFETs designed for • • •
• Differential Amplifiers • High Input
Impedance Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Ga.
2N5902 - N-Channel Monolithic Dual JFET
(National Semiconductor)
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2N5903 - monolithic dual n-channel JFET
(Intersil Corporation)
.
2N5903 - dual n-channel JFET
(Siliconix)
matched dual n-channel JFETs designed for • • •
• Differential Amplifiers • High Input
Impedance Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Ga.
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