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2N6365 Datasheet - ETC

2N6365 PNP GERMANIUM RF AMPLIFIER TRANSISTORS

2N636S,2N636SA (GERMANIUM) PNP GERMANIUM RF AMPLIFIER TRANSISTORS .. designed for use in high gain RF amplifier applications. Coliector Emitter Breakdown Voltage - BVCES = 25 Vdc (Min) @ IC = 200l1Adc High Power Gain Gpe = 30 dB (Typ) @ VCE = 6.0 Vdc. f = 10 MHz Low Collector Base Capacitance Ccb = 2.0 pF (Max) @VCB= 10 Vdc PNP GERMANIUM RF AMPLIFIER TRANSISTORS 'MAXIMUM RATINGS Rating Collector-Emitter Voltage (1) Collector-Base Voltage Emitter-Bas.

2N6365-ETC.pdf

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Datasheet Details

Part number:

2N6365

Manufacturer:

ETC

File Size:

98.50 KB

Description:

Pnp germanium rf amplifier transistors.

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2N6365 2N6365 PNP GERMANIUM AMPLIFIER TRANSISTORS ETC

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