2N6368 Datasheet - ETC

2N6368 - NPN SILICON RF POWER TRANSISTOR

2N6368 (SILICON) The RF Line NPN SILICON RF POWER TRANSISTOR .. designed primarily for applications as a high power linear ampli fier from 2.0 to 30 MHz. Optimized for Operation from a 12.5 Volt Supply Power Output @ 12.5 Vdc, 30 MHz = 40 W (PEP) Power Gain @ 30 MHz = 10 dB (Min) Intermodulation Distortion at Rated Power Output - IMD = -30 dB (Max) Isothermal Resistor Design Results in Rugged Device 40 W (PEP) - 30 MHz RF PO.

2N6368-ETC.pdf

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Datasheet Details

Part number:

2N6368

Manufacturer:

ETC

File Size:

449.18 KB

Description:

Npn silicon rf power transistor.

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2N6368 NPN SILICON POWER TRANSISTOR ETC